IRFR2405TRLPBF vs IPD042P03L3GATMA1 Comparison
Detailed side-by-side comparison of IRFR2405TRLPBF by Infineon and IPD042P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR2405TRLPBF | IPD042P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.28 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFET, 7th generation) | OptiMOSβ’ P (Trench) |
| Drain-Source Voltage (VDS) | 55 V | -30 V |
| Continuous Drain Current (ID) at Tc | 56 A | β |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | -280 A |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | β |
| Gate Charge (Qg) typical | 70 nC | β |
| Power Dissipation (PD) at Tc | 110 W | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55Β°C to +175Β°C (TJ) |
| Package | TO-252AA (DPAK), 3-pin (2 + Tab) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | β |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | β |
| Packaging | Tape & Reel (TR) | β |
| Polarity | β | P-Channel |
| Continuous Drain Current (ID, Tc=25Β°C) | β | -70 A |
| RDS(on) max @ VGS = -10 V | β | 4.2 mΞ© |
| RDS(on) max @ VGS = -4.5 V | β | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | β | -1.5 V (typ) |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25Β°C) | β | 150 W |
| Single-Pulse Avalanche Energy (EAS) | β | 290 mJ |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |