IRFR2405TRLPBF vs IPD042P03L3GATMA1 比較
詳細並排比較 IRFR2405TRLPBF 由 Infineon 與 IPD042P03L3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR2405TRLPBF | IPD042P03L3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | OptiMOS™ P (Trench) |
| Drain-Source Voltage (VDS) | 55 V | -30 V |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | -280 A |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| 工作溫度範圍 | -55 C to +175 C (junction) | -55°C to +175°C (TJ) |
| 封裝 | TO-252AA (DPAK), 3-pin (2 + Tab) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | — |
| Packaging | Tape & Reel (TR) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 |