IRFR2405TRLPBF vs IPD042P03L3GATMA1 Perbandingan
Perbandingan bersamaan detil IRFR2405TRLPBF dari Infineon dan IPD042P03L3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR2405TRLPBF | IPD042P03L3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | OptiMOS™ P (Trench) |
| Drain-Source Voltage (VDS) | 55 V | -30 V |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | -280 A |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Rentang Suhu Kerja | -55 C to +175 C (junction) | -55°C to +175°C (TJ) |
| Paket | TO-252AA (DPAK), 3-pin (2 + Tab) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | — |
| Packaging | Tape & Reel (TR) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 |