IRFR2405TRPBF vs IRFR2405TRLPBF Comparison

Detailed side-by-side comparison of IRFR2405TRPBF by Infineon and IRFR2405TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF βœ“ Active
Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRPBF IRFR2405TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.55
Manufacturer Infineon Technologies β€”
Part Status Active β€”
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 7th generation)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at Tc=25C 56 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 200 A (typical, per datasheet family)
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] Β±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
On-Resistance RDS(on) max at VGS=10V 16 mOhm β€”
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] β€”
Total Gate Charge (Qg) 70 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK), 3-pin (2 + Tab)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) + Tab β€”
MSL Level 1 β€”
RoHS Status Compliant (Lead-Free PBF suffix) β€”
Halogen-Free [DATA_NEEDED: halogen-free status] β€”
Avalanche Rated Yes (100% avalanche tested) β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc β€” 56 A
On-Resistance RDS(on) max @ VGS=10V β€” 16 mOhm
Gate Charge (Qg) typical β€” 70 nC
Power Dissipation (PD) at Tc β€” 110 W
Operating Temperature Range β€” -55 C to +175 C (junction)
Avalanche Energy Rated β€” Yes (HEXFET ruggedized design)
Lead-Free / RoHS β€” Yes, PBF suffix indicates lead-free and RoHS compliant
Packaging β€” Tape & Reel (TR)

Datasheets & Resources

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