IRFR2405TRPBF vs IRFR2405TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR2405TRPBF sa pamamagitan ng Infineon at IRFR2405TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ Nakahanda
Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR2405TRPBF IRFR2405TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 7th generation)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 200 A (typical, per datasheet family)
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK), 3-pin (2 + Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) + Tab —
Level ng MSL 1 —
Tindminan RoHS Compliant (Lead-Free PBF suffix) —
Wala sa Halogen [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 56 A
On-Resistance RDS(on) max @ VGS=10V — 16 mOhm
Gate Charge (Qg) typical — 70 nC
Power Dissipation (PD) at Tc — 110 W
Hanay ng Temperature na Operasyon — -55 C to +175 C (junction)
Avalanche Energy Rated — Yes (HEXFET ruggedized design)
Lead-Free / RoHS — Yes, PBF suffix indicates lead-free and RoHS compliant
Packaging — Tape & Reel (TR)

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