IRFR5305TRLPBF vs IRFR1205TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRLPBF sa pamamagitan ng Infineon at IRFR1205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR5305TRLPBF IRFR1205TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V 55 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-Source Voltage (VGS) max ±20 V +/- 20 V
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] 2 V min, 4 V max
Power Dissipation (PD) at Tc=25C 110 W —
Temperature ng Junction na Operasyon -55C to +175C -55C to +175C
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (IR MOSFET, 5th generation)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 44 A
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
Tindminan RoHS — Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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