IRFR5305TRLPBF vs IRFR5410TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRLPBF sa pamamagitan ng Infineon at IRFR5410TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR5305TRLPBF IRFR5410TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V ±20 V
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (advanced process, Gen 5)
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC = 25 °C — -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V — 205 mΩ
Total Gate Charge (Qg) typ — 70 nC
Power Dissition (PD) at TC = 25 °C — 66 W
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (TJ)
Lead-Free / RoHS Status — Lead-free, RoHS compliant (PBF suffix)
Level ng MSL — [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions — VGS = -10 V, ID = -7.0 A

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