IRFR6215TRLPBF vs IRFR5505TRPBF Perbandingan

Perbandingan bersamaan detil IRFR6215TRLPBF dari Infineon dan IRFR5505TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR6215TRLPBF IRFR5505TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -150 V —
Continuous Drain Current (ID) at Tc=25C -13 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] -72 A
Gate-Source Voltage (VGS) max ±20 V +/-20 V
RDS(on) max at VGS=-10V 580 mOhm —
Total Gate Charge (Qg) typ 44 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Maximum Operating Junction Temperature 175 C —
Paket TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET Power MOSFET (Fifth Generation) IR MOSFET (HEXFET 5th generation)
Level MSL 1 —
Status RoHS Compliant Compliant (PBF suffix)
Lead-Free Yes Yes (PBF suffix)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Series — HEXFET
Drain-Source Voltage (VDS) max — -55 V
Continuous Drain Current (ID) at TC=25C — -18 A
On-Resistance RDS(on) max at VGS=-10V — 110 mOhm
Total Gate Charge (Qg) — 21.3 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
Suhu Hubung Kerja — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)

Spek dan Sumber

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