Infineon

IRFZ24NPBF - 55V 17A N-Channel HEXFET MOSFET TO-220AB | Infineon

MPN: IRFZ24NPBF βœ“ Active
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55 V Vdss 17 A Id 70 mOhm (max) Rds(on) TO-220AB (through hole) Package Optimized for < 100 kHz Speed
From $0.46 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $0.95 $0.95
10 $0.82 $8.20
100 $0.68 $68.00
500 $0.55 $275.00
1,000 $0.46 $460.00
ℹ️ All prices are in USD

Drop-in alternatives for IRFZ24NPBF β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IRFZ34N

βœ… Drop-In
πŸ“¦ TO-220AB
RDS(on) ~50 mOhm vs 70 mOhm, 29A vs 17A continuous (-29% to +70% higher current rating, otherwise pin-compatible)

πŸ“‹ Reference alternative (not in catalog)

IRLZ24NPBF

βœ… Drop-In
πŸ“¦ TO-220AB
logic-level gate (VGS(th) ~1V vs ~2V for IRFZ24N), enables 5V MCU direct drive, identical 55V/17A ratings

πŸ“‹ Reference alternative (not in catalog)

IRFZ44N

βœ… Drop-In
πŸ“¦ TO-220AB
49A vs 17A continuous (+188% current), 17.5 mOhm vs 70 mOhm RDS(on) (-75%), same TO-220AB footprint

πŸ“‹ Reference alternative (not in catalog)

STP55NF06L

βœ… Drop-In
πŸ“¦ TO-220AB
60V vs 55V VDS (+9%), 50A vs 17A continuous, logic-level gate, TO-220AB pin-compatible cross-brand substitute

πŸ“‹ Reference alternative (not in catalog)

NTD18N06T4

βœ… Drop-In
πŸ“¦ TO-220AB
60V vs 55V VDS (+9%), 18A vs 17A continuous (+6%), TO-220AB pin-compatible cross-brand substitute

πŸ“‹ Reference alternative (not in catalog)

IRFZ24N

βœ… Drop-In
πŸ“¦ TO-220AB
same die without PBF lead-free finish, otherwise pin-to-pin identical 55V/17A/70 mOhm specifications

πŸ“‹ Reference alternative (not in catalog)

IRFZ24NPBF Maximum Ratings & Electrical Characteristics

FET Type N-Channel
Drain-to-Source Voltage (VDS) 55 V
Continuous Drain Current (ID) at TC=25C 17 A
Gate-to-Source Voltage (VGS) Β± 20 V
RDS(on) at VGS=10V 70 mOhm (max)
Total Gate Charge (Qg) 13.3 nC
Power Dissipation (PD) at TC=25C 45 W
Operating Junction Temperature -55C to +175C
Package TO-220AB (through hole)
Mounting Type Through Hole
Technology HEXFET planar cell
Switching Frequency Range Optimized for < 100 kHz
RoHS Status Compliant
Lead-Free Yes (PBF suffix)
Qualification JEDEC standard
Channel Mode Enhancement

IRFZ24NPBF Pin Configuration

TO-220 Package Pinout Diagram TO-220 3-pin vertical mount with tab, JEDEC. 1 2 3 TO-220
Pin 1 Gate β€” Gate drive input; drive to +10V to fully enhance
Pin 2 Drain β€” Drain terminal; also electrically tied to the metal mounting tab
Pin 3 Source β€” Source terminal; reference for gate drive and Kelvin connection

IRFZ24NPBF Safe Operating Area (DC)

DC Continuous Operation

Typical Applications

IRFZ24NPBF is suitable for 6 applications: DC Motor Drive (H-Bridge / Low-Side), Solenoid and Relay Driver, Uninterruptible Power Supply (UPS) / Battery Switch, Low-Frequency Switch-Mode Power Supply (SMPS), Automotive 12V Load Switch, Power Tool Speed Controller (PWM).

🏭

DC Motor Drive (H-Bridge / Low-Side)

The IRFZ24NPBF is well suited to low-side switching of brushed DC motors in the 5A-15A continuous range. Its 70 milliohm RDS(on) at VGS=10V keeps conduction loss under 1W at 12V/10A, while the 13.3 nC total gate charge lets a small IR2104 or discrete push-pull driver toggle the MOSFET at PWM frequencies up to 25 kHz. The 55V VDS rating gives 31V headroom above a 24V industrial bus, so inductive flyback from the motor winding is comfortably absorbed by the avalanche-rated body diode.

⚑

Solenoid and Relay Driver

For 12V and 24V solenoid or relay coils, the IRFZ24NPBF delivers the 17A continuous current capability needed to actuate large inductive loads. Its HEXFET planar cell structure provides a wide safe operating area, so the inrush current of an uncharged coil does not exceed the SOA envelope. Place a flyback diode across the coil and add a 10 kohm gate-source resistor to prevent false turn-on from dv/dt coupling during switch-off.

πŸ”‹

Uninterruptible Power Supply (UPS) / Battery Switch

In 12V and 24V lead-acid UPS systems the IRFZ24NPBF serves as a low-loss disconnect switch between battery and load. The 55V VDS comfortably exceeds 24V battery voltage plus transient spikes, while the 70 milliohm RDS(on) limits continuous loss to about 0.7W at 10A discharge current. The HEXFET body diode provides a path for inrush from the charger, simplifying reverse-battery protection circuitry.

πŸ–₯️

Low-Frequency Switch-Mode Power Supply (SMPS)

For SMPS topologies operating below 100 kHz - such as forward converters, push-pull stages, and large-rail buck regulators - the IRFZ24NPBF is an efficient switching element. Its 13.3 nC Qg keeps gate drive loss below 0.2W at 25 kHz with VGS swing of 10V, and the planar cell structure supports the avalanche energy encountered during transformer primary switching. Use a UCC28C42 or similar PWM controller for the gate signal.

πŸš—

Automotive 12V Load Switch

Inside 12V automotive body-electronics modules - headlight drivers, seat heaters, accessory relays - the IRFZ24NPBF switches loads up to 17A from a 12V bus. The 55V VDS withstands 40V load-dump transients with sufficient margin, while the 70 milliohm RDS(on) keeps dissipation under 1.5W at the part's typical 15A continuous load. Add an RC snubber (100 ohm + 100 nF) across drain-source to suppress automotive EMI.

πŸ”§

Power Tool Speed Controller (PWM)

Cordless drill and other 18V-24V power-tool speed controllers use the IRFZ24NPBF as the low-side PWM element driving the brush motor. The HEXFET structure handles the high inrush during stall conditions, and the 45W power dissipation at TC=25C provides thermal headroom when mounted to the tool's aluminum chassis acting as a heatsink. A simple 555-timer or microcontroller generates the 1-20 kHz PWM gate signal.

Recommended Products Summary

IR2104 Half-bridge gate driver for H-bridge topology Used in: DC Motor Drive (H-Bridge / Low-Side) IRFZ44N Higher-current companion MOSFET for high-side position Used in: DC Motor Drive (H-Bridge / Low-Side) 1N4007 Flyback diode across inductive load Used in: Solenoid and Relay Driver BSS138 Low-level gate driver from 3.3V MCU Used in: Solenoid and Relay Driver IRFR2405TRLPBF Infineon Used in: Uninterruptible Power Supply (UPS) / Battery Switch IRLZ34N Logic-level alternative for direct MCU control Used in: Uninterruptible Power Supply (UPS) / Battery Switch UCC28C42 Current-mode PWM controller for SMPS Used in: Low-Frequency Switch-Mode Power Supply (SMPS) IRFZ34N Higher-current variant for >15A outputs Used in: Low-Frequency Switch-Mode Power Supply (SMPS) IRF4905SPBF Infineon Used in: Automotive 12V Load Switch BTS500801TEAAUMA1 Infineon Used in: Automotive 12V Load Switch IRLR2705TRPBF Infineon Used in: Power Tool Speed Controller (PWM) IPD60R280P7SAUMA1 Infineon Used in: Power Tool Speed Controller (PWM)
What is the maximum drain-to-source voltage of the IRFZ24NPBF?
The IRFZ24NPBF has a maximum drain-to-source voltage (VDS) of 55 V. According to the Infineon datasheet, this rating makes the part suitable for 12 V and 24 V automotive/industrial buses, 48 V telecom battery systems, and other applications where the bus voltage stays comfortably below 55 V including inductive transients clamped by the avalanche-rated body diode.
What is the continuous drain current of the IRFZ24NPBF?
The IRFZ24NPBF is rated for 17 A continuous drain current at TC=25C, as listed by DigiKey and the Infineon datasheet. At elevated case temperatures the current must be derated using the SOA curve; for most through-hole designs the practical continuous load is 8-10 A without a heatsink and up to 17 A with adequate thermal management.
What is the RDS(on) of the IRFZ24NPBF at 10V gate drive?
The IRFZ24NPBF specifies a maximum drain-source on-resistance of 70 milliohm at VGS=10V and ID=10A. According to Mouser and the Infineon datasheet, this low RDS(on) minimizes conduction loss in 12V switching applications, making the part a strong fit for low-frequency DC motor and solenoid drivers.
Does the IRFZ24NPBF require a heatsink for continuous operation?
Above approximately 15 W continuous dissipation, the IRFZ24NPBF requires a TO-220 heatsink with thermal compound. Estimated: with a junction-to-ambient thermal resistance of about 62 C/W (no heatsink) and 45 W maximum rating, an uncooled TO-220 would exceed its 175C junction limit at far less than 45 W; a 10 C/W heatsink extends the safe dissipation envelope substantially.
What is the gate charge of the IRFZ24NPBF?
The IRFZ24NPBF has a total gate charge (Qg) of 13.3 nC, as specified by Mouser and the Infineon datasheet. This low Qg allows the gate driver to fully enhance the channel with modest drive current, supporting switching frequencies up to 100 kHz; for clean edges the driver should source/sink at least 1 A peak.
Where can I buy the IRFZ24NPBF online?
The IRFZ24NPBF is in stock at DigiKey (listing 811776) and Mouser, and is also visible on Octopart with pricing from 7 distributors as of 2026-09-13. Typical 1-piece pricing is around USD 0.95, with 1000-piece pricing dropping to approximately USD 0.46 per unit. Lead time is generally same-day for distributor stock.
What is the price of the IRFZ24NPBF as of 2026?
As of 2026-09-13, the IRFZ24NPBF unit price is approximately USD 0.95 at qty 1, dropping to USD 0.46 at qty 1000 on DigiKey and Mouser. Octopart aggregates 7 distributors for real-time comparison. Pricing on this commodity 55V MOSFET tends to fluctuate with wafer capacity, but volume breaks remain aggressive for this mature part.
What is the lead time for the IRFZ24NPBF?
DigiKey lists the IRFZ24NPBF as 'ships today' from local stock, and Mouser shows comparable immediate availability as of 2026-09-13. Because this part has been in production for many years across IR/International Rectifier/Infineon, allocation risk is low and distributors typically hold reel/tray inventory in the tens of thousands.
IRFZ24NPBF vs IRLZ24NPBF - which is better for low-voltage switching?
The IRLZ24NPBF is a logic-level variant optimized for 5V gate drive, while the standard IRFZ24NPBF requires a 10V VGS to fully enhance. For 3.3V or 5V microcontrollers driving the gate directly, the IRLZ24NPBF is the better choice; for systems with a 10V-12V gate drive supply, the IRFZ24NPBF gives slightly lower RDS(on). Both share the TO-220AB package and 55V/17A ratings.
IRFZ24NPBF vs IRFZ44N - which is better for my motor drive?
The IRFZ44N is rated for 55V and 49A, far higher current than the 17A IRFZ24NPBF. For sub-10A continuous loads the IRFZ24NPBF is the more cost-effective choice, while the IRFZ44N is preferred for higher-current motors. Both use TO-220AB; check thermal and SOA requirements before substituting either direction.
When should I choose the IRFZ24NPBF over the IRF540N?
Choose the IRFZ24NPBF when your design runs at lower switching frequencies (under 100 kHz), lower bus voltages (under 55 V), and modest continuous currents (under 17 A) where its 70 milliom RDS(on) and 45 W dissipation are sufficient. Pick the IRF540N (100 V, 33 A) instead when the bus voltage exceeds 55 V or continuous current exceeds 17 A.
Is the IRFZ24NPBF suitable for a 24V solenoid driver?
Yes, the IRFZ24NPBF is well suited to 24V solenoid and relay drivers. The 55 V VDS gives 31 V of headroom above a 24 V nominal rail, the 17 A continuous rating handles most industrial solenoids, and the 13.3 nC gate charge allows a small gate driver IC or discrete BJT/MOSFET push-pull stage to switch the load quickly and reliably.
What is the best drop-in replacement for the IRFZ24NPBF?
The closest pin-for-pin drop-in replacements for the IRFZ24NPBF (TO-220AB, 55V, 17A, N-channel) are the IRLZ24NPBF (logic-level gate), IRFZ34N (slightly higher RDS(on), 55V/29A), and cross-brand parts such as the STP55NF06L from STMicroelectronics. Always confirm VGS(th) and SOA curves match your switching topology before substituting.
Where can I download the IRFZ24NPBF datasheet PDF?
The IRFZ24NPBF datasheet is hosted on Infineon's asset CDN at the URL on this product page (infineon-irfz24n-datasheet-en.pdf). DigiKey also publishes an HTML datasheet view under part number 811776, and archive sites such as Alldatasheet mirror the original IR (International Rectifier) version that predates the Infineon acquisition.
Where can I find the IRFZ24NPBF pinout?
The IRFZ24NPBF uses the standard TO-220AB 3-pin MOSFET pinout: pin 1 = Gate, pin 2 = Drain (also connected to the metal tab), pin 3 = Source. This matches every other TO-220AB HEXFET and IRF-series N-channel MOSFET, so the device can be substituted on the same PCB land pattern whenever the electrical ratings are compatible.
Hey Google, what can replace an IRFZ24NPBF in a 12V motor driver?
For a 12V motor driver, the IRFZ24NPBF can be replaced by the IRLZ24NPBF (logic-level gate, same TO-220AB), the IRFZ44N (higher current headroom), or the STP55NF06L from STMicroelectronics (cross-brand drop-in, TO-220AB). All three share the standard 3-pin TO-220AB pinout and 55-60V VDS rating, ensuring no PCB rework is required.
What are the key specifications of the IRFZ24NPBF that engineers should know?
The IRFZ24NPBF is a 55V, 17A, N-channel HEXFET MOSFET in TO-220AB with 70 milliohm maximum RDS(on) at VGS=10V, 13.3 nC total gate charge, and 45 W power dissipation at TC=25C. It uses Infineon's planar HEXFET cell structure, is qualified to JEDEC standards, and is optimized for switching frequencies below 100 kHz per the manufacturer datasheet.

Engineering reference data for IRFZ24NPBF β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IRFZ24NPBF when you need a 55V, 17A N-channel MOSFET in TO-220AB for low-to-medium current 12V or 24V switching applications driven by a 10V gate signal. It is the best value choice for sub-15A continuous motor drivers, solenoid/relay switches, and UPS battery disconnects. Pick the IRLZ24NPBF instead if your MCU produces only 5V gate drive. Pick the IRFZ44N when continuous current exceeds 17A. Pick the STP55NF06L from STMicroelectronics when you need cross-brand sourcing flexibility with logic-level gate. All four alternatives share the TO-220AB footprint, so the PCB land pattern remains identical across the family.

Comparison with Alternatives

Parameter This Product IRFZ34N IRLZ24NPBF IRFZ44N STP55NF06L NTD18N06T4
Brand Infineon Infineon Infineon Infineon STMicroelectronics onsemi
Package TO-220AB TO-220AB - same TO-220AB - same TO-220AB - same TO-220AB - same TO-220AB - same
Drain-Source Voltage (VDS) 55 V 55 V 55 V 55 V 60 V 60 V
Continuous Drain Current (ID, TC=25C) 17 A 29 A 17 A 49 A 50 A 18 A
RDS(on) at VGS=10V (max) 70 mOhm 50 mOhm 70 mOhm 17.5 mOhm 20 mOhm 60 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED] [DATA_NEEDED] ~1V (logic-level) [DATA_NEEDED] ~1V (logic-level) [DATA_NEEDED]
Total Gate Charge (Qg) 13.3 nC [DATA_NEEDED] 13.3 nC 63 nC [DATA_NEEDED] [DATA_NEEDED]
Power Dissipation (PD, TC=25C) 45 W 68 W 45 W 94 W 95 W 55 W
Logic-Level Gate (5V drive) No No Yes No Yes No
Approx. 1k-Piece Price (USD) 0.46 0.55 0.50 0.65 0.95 0.55

Key Differentiators

  • Best price/performance balance for sub-15A 12V/24V switching (vs IRFZ44N)
  • Mature JEDEC-qualified HEXFET process (vs STP55NF06L (STMicroelectronics))
  • Wide distribution and immediate availability (vs NTD18N06T4 (onsemi))

Design Notes

The TO-220AB junction-to-ambient thermal resistance is approximately 62 C/W without a heatsink. Estimated: at 5A continuous load and VDS=12V, dissipation is I^2*R = 25*0.070 = 1.75 W, which gives a junction rise of about 108 C above 25C ambient - already near the 175C limit. Add a 10 C/W heatsink with thermal compound to bring the junction rise below 30 C and allow safe operation near the 45 W datasheet maximum at 25C case temperature.

Place the gate drive resistor (typically 10-100 ohm) within 5 mm of the gate pin to suppress ringing from the gate-source loop inductance. Keep the source return path short and wide; the gate-source loop inductance combined with the Miller capacitance can otherwise cause >5V ringing at switch-off, which may exceed the Β±20V VGS maximum. A 10 kohm gate-source pull-down resistor guarantees the MOSFET stays off during MCU reset.

Do not use the IRFZ24NPBF directly from a 3.3V or 5V microcontroller GPIO without a gate driver. Its VGS(th) is typically 2-4V, so a 3.3V signal will leave the MOSFET in its linear region with high RDS(on) and excessive dissipation. Use a logic-level MOSFET like IRLZ24NPBF instead for 5V direct drive, or add a simple BJT/MOSFET push-pull driver to translate 3.3V to the required 10V VGS.

When driving inductive loads, add a flyback diode (1N4007 or Schottky MBR1045) directly across the coil with leads shorter than 10 mm. Even though the HEXFET structure is avalanche-rated, repeated unclamped flyback events stress the die and shorten lifetime. For switching frequencies above 1 kHz, add an RC snubber (100 ohm + 100 nF) across drain-source to reduce dV/dt-induced ringing.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS-compliant per Infineon product page; 'PBF' suffix indicates lead-free plating. Not AEC-Q100 qualified - choose an automotive-grade equivalent such as IRFZ24NSTRLPBF (Infineon automotive line) for vehicle applications. Halogen-free status not explicitly stated in verified data.

Data verified on: 2026-09-13 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon IRFZ24NPBF IRFZ24N IRLZ24NPBF IRFZ34N IRFZ44N STP55NF06L NTD18N06T4 N-channel MOSFET power MOSFET HEXFET planar cell TO-220AB TO-220 through-hole package RDS(on) gate charge PSRR safe operating area JEDEC RoHS AEC-Q100 lead-free logic-level gate low-side switch H-bridge SMPS DC motor drive solenoid driver UPS battery switch
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