IRFZ48NPBF vs IRLB8748PBF Comparison

Detailed side-by-side comparison of IRFZ48NPBF by Infineon and IRLB8748PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NPBF IRLB8748PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) ±20 V —
On-Resistance (RDS(on)) at VGS=10V 14 mΩ (maximum) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 54 nC 15 nC typical
Power Dissipation (PD) at TC 130 W —
Operating Junction Temperature -55C to +175C —
Package TO-220AB (through-hole) —
Mounting Type Through Hole Through Hole
Technology HEXFET (advanced planar) —
Lead-Free (PBF suffix) Yes —
RoHS Status Compliant Compliant (Pb-free PBF suffix)
Qualification Standard Industrial market JEDEC (Industrial market per datasheet)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TC=25C — 92 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=10V — 4.8 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C — 75 W
Operating Temperature Range — -55C to +175C (junction)
Package Type — TO-220AB through-hole
Technology Family — StrongIRFET / HEXFET
Channel Type — N-Channel
Logic-Level Gate Drive — Yes (optimized for 5V VGS)

Datasheets & Resources

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