IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220
MPN: IRFZ48NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
IRFZ48NPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used to switch or amplify power in electronic circuits. The N-channel variant conducts when a positive gate-to-source voltage is applied and is preferred over P-channel in most low-voltage, high-current applications because electron mobility is roughly 2-3× higher than hole mobility, yielding lower RDS(on) for the same die area. Power MOSFETs sit in the power-semiconductor hierarchy alongside IGBTs and BJTs and dominate applications below 250 V where switching frequency exceeds a few kHz.
Key features of the IRFZ48NPBF include advanced planar HEXFET process technology that achieves 14 mΩ RDS(on) at VGS = 10 V, a fast switching speed with 54 nC total gate charge, and a ruggedized body diode rated for avalanche energy. The TO-220AB package offers low thermal resistance (junction-to-case) suitable for chassis-mounted heatsink operation, and the part is qualified to Infineon's industrial market standard.
Typical applications include high-current DC-DC converters, motor drive H-bridges, solenoid and relay drivers, synchronous rectifier positions in switch-mode power supplies, automotive 12 V accessory switching, and uninterruptible power supply battery management. The 64 A continuous rating makes it suitable for inverter stages below 5 kW.
When designing with this device, derate continuous current to roughly 25% of the rated figure without a substantial heatsink, ensure VGS(th) is comfortably exceeded by the gate-drive voltage under all temperature conditions, and add a gate-source resistor (typically 10-100 Ω) to suppress parasitic ringing.
Drop-in alternatives for IRFZ48NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFZ48NPBF (same form factor and footprint) — differing in Technology, Mounting Type, RoHS Status, Total Gate Charge (Qg), FET Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
AUIRFZ48N
✅ Drop-In📋 Reference alternative (not in catalog)
IRFZ48VPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRL3705NPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.92 / Unit
View Datasheet →IRFB7545PBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.95 / Unit
View Datasheet →IPB110P06LMATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.31 / Unit
View Datasheet →IRFZ48NPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC | 64 A |
| Gate-to-Source Voltage (VGS) | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) |
| Total Gate Charge (Qg) | 54 nC |
| Power Dissipation (PD) at TC | 130 W |
| Operating Junction Temperature | -55C to +175C |
| Package | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| Technology | HEXFET (advanced planar) |
| Lead-Free (PBF suffix) | Yes |
| RoHS Status | Compliant |
| Qualification Standard | Industrial market |
IRFZ48NPBF Pin Configuration
| Pin 1 | Gate — Gate input - drive to VGS=10V for full enhancement |
| Pin 2 | Drain — Drain output (also connected to metal tab) |
| Pin 3 | Source — Source return - typically tied to circuit ground |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRFZ48NPBF is suitable for 6 applications: DC-DC Converter Synchronous Rectifier, Brushed DC Motor Drive (H-Bridge), Automotive 12V Accessory Switching, Uninterruptible Power Supply (UPS) Battery Management, Solenoid and Relay Driver, Class-D Audio Amplifier Output Stage.
DC-DC Converter Synchronous Rectifier
The IRFZ48NPBF fits synchronous rectifier positions in 12-48 V buck and forward converters because its 14 mΩ RDS(on) at VGS = 10 V keeps conduction loss below 4 W at 30 A load, while 54 nC total gate charge supports 200-500 kHz switching with standard PWM controller ICs. Placed in the low-side position with the drain tab bonded to the switching node and source to ground, it replaces a Schottky diode to gain 5-8% efficiency. Compared to a Schottky rectifier, the IRFZ48NPBF eliminates forward-voltage drop but requires a complementary gate-drive signal and a small dead-time to prevent shoot-through. The 64 A continuous rating provides 2× safety margin above typical 25-30 A buck-converter output currents. Designers should verify VDS transient margin under inductor ring and add a TVS clamp if ringing approaches 50 V.
Recommended
Brushed DC Motor Drive (H-Bridge)
The IRFZ48NPBF is widely used as the switching element in 12-36 V brushed DC motor H-bridges driving pumps, fans, and small traction loads. With 64 A continuous drain current it can switch motors drawing up to 30 A continuous (well below the 64 A rating) without paralleling devices, and the 14 mΩ RDS(on) keeps I²R loss manageable at full torque. The TO-220AB package bolts to the chassis or motor bracket, providing both thermal management and a robust mechanical connection. The HEXFET process provides a rugged avalanche-rated body diode that absorbs inductive kickback when the motor is commutated, eliminating the need for an external flyback diode in most cases. For PWM speed control at 1-25 kHz, the 54 nC gate charge is comfortably driven by gate-driver ICs or even microcontrollers with appropriate gate resistors.
Recommended
Automotive 12V Accessory Switching
The IRFZ48NPBF handles high-current 12 V automotive accessory switching for loads such as auxiliary lighting, fuel pumps, and seat heaters. Its 55 V VDS rating provides 4× headroom over a 12 V nominal bus, comfortably absorbing load-dump transients up to 35 V that occur when the alternator disconnects with the engine running. The 64 A continuous rating supports fused loads up to 50 A, and the HEXFET process provides avalanche ruggedness for the inductive kickback produced when solenoids and motors are de-energized. For OEM automotive designs, however, the AUIRFZ48N (AEC-Q101 qualified variant in the same TO-220AB footprint) is preferred over the standard IRFZ48NPBF, which is industrial-grade only. The lead-free PBF finish remains RoHS-compliant for aftermarket and DIY automotive electronics.
Recommended
Uninterruptible Power Supply (UPS) Battery Management
In low-to-mid-power UPS systems (300 VA to 3 kVA), the IRFZ48NPBF serves as the battery-disconnect switch and the inverter-stage switching element. With 64 A continuous rating it handles the inrush current of transformer-coupled inverters and the steady discharge current of lead-acid battery banks up to 1 kWh. The low 14 mΩ RDS(on) keeps voltage drop across the disconnect switch below 0.5 V at 30 A, preserving battery runtime during grid outages. The rugged HEXFET body diode tolerates reverse-current events when the inverter feeds back into a battery that has reached absorption voltage. Designers should add a pre-charge circuit (a series resistor plus a smaller MOSFET) in parallel with the main disconnect to limit Cdv/dt inrush into the bulk capacitors.
Recommended
Solenoid and Relay Driver
The IRFZ48NPBF drives high-current solenoids, contactors, and latching relays in industrial control and HVAC systems. A single TO-220AB part can switch solenoids drawing 20-40 A continuous - well below its 64 A rating - with the package bolted to a small aluminum bracket for thermal management. The HEXFET body diode clamps the back-EMF generated when the solenoid is de-energized, simplifying the snubber circuit and often eliminating the external flyback diode entirely. For pulse-width-modulated solenoid control (proportional valves, PWM fan speed), the 54 nC gate charge supports switching frequencies up to 50 kHz with standard low-side gate drivers. Designers should size the heatsink for the I²R loss of the holding current (typically much lower than the inrush current).
Recommended
Class-D Audio Amplifier Output Stage
The IRFZ48NPBF can serve as the output-stage switch in sub-500 W Class-D audio amplifiers where its 14 mΩ RDS(on) and 54 nC gate charge strike a balance between conduction loss and switching loss. In a half-bridge output stage switching 250 kHz-500 kHz PWM at ±25 V rails, the IRFZ48NPBF delivers roughly 30 A continuous with adequate heatsinking. The HEXFET process is well-suited to audio because the body-diode recovery is soft and contributes minimal distortion to the output. Compared to surface-mount MOSFETs in the same current class, the TO-220AB package provides superior thermal mass for sustained high-power musical peaks. Designers should add a small dead-time (50-100 ns) to prevent shoot-through and select complementary P-channel devices for the high-side position if true bridge-tied load output is required.
Recommended
Recommended Products Summary
Engineering reference data for IRFZ48NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AUIRFZ48N | IRFZ48VPBF | IRL3705NPBF | IRFB7545PBF | IPB110P06LMATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| VDS (Drain-Source Voltage) | 55 V | 55 V | 60 V | 55 V | 60 V | 60 V |
| Automotive Qualification | No (industrial) | Yes (AEC-Q101) | No | No | No | Yes (AEC-Q101) |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
Key Differentiators
- Infineon HEXFET process technology with industrial qualification (vs AUIRFZ48N)
- 55V VDS optimized for 12V/24V industrial buses (vs IRFZ48VPBF)
- Low 14 mΩ RDS(on) in standard TO-220AB outline (vs IRFB7545PBF)
Design Notes
Estimated: at continuous ID=64 A through RDS(on)=14 mΩ, conduction loss is I²R = 64² × 0.014 ≈ 57 W. With TO-220AB junction-to-ambient thermal resistance of roughly 62 C/W (no heatsink), junction temperature would exceed 175C almost immediately. A heatsink with thermal resistance below 1 C/W is mandatory for sustained high-current operation; alternatively derate to roughly 25-30 A continuous without a heatsink. The metal tab is internally connected to the drain, so the mounting hardware and heatsink must be electrically isolated if the drain is not at ground potential.
Keep the gate-drive loop as short as possible - place the gate resistor (typically 10-47 Ω) within 5 mm of the gate pin to limit parasitic inductance and ringing. Use a separate gate-source resistor (1-10 kΩ) to hold the FET off during controller startup when VGS might otherwise float. Source inductance is particularly damaging because it appears in series with VGS during switching transients and can cause the FET to oscillate; use a Kelvin connection to source when driving high di/dt loads.
Do not exceed VGS=±20 V even though many modern MOSFETs tolerate 30 V - the IRFZ48NPBF specifies ±20 V absolute maximum and gate-oxide rupture is permanent. Do not rely on the body diode for repetitive high-current freewheeling - the HEXFET body diode has modest reverse-recovery characteristics and a Schottky or external SiC diode in parallel may be needed for hard-switched bridge applications. Always check avalanche energy (EAR) when switching inductive loads and add a TVS clamp if computed avalanche energy exceeds the datasheet single-pulse rating.
Compliance Information
RoHS compliant per PBF suffix designation in the MPN and Infineon datasheet. Not AEC-Q100/AEC-Q101 qualified - choose AUIRFZ48N for automotive. Halogen-free status not explicitly stated in the verified data.
