IRFZ48NPBF vs IRLB8748PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ48NPBF disebabkan oleh Infineon dan IRLB8748PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ48NPBF IRLB8748PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) ±20 V —
On-Resistance (RDS(on)) at VGS=10V 14 mΩ (maximum) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 54 nC 15 nC typical
Power Dissipation (PD) at TC 130 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (through-hole) —
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET (advanced planar) —
Lead-Free (PBF suffix) Yes —
Status RoHS Compliant Compliant (Pb-free PBF suffix)
Qualification Standard Industrial market JEDEC (Industrial market per datasheet)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TC=25C — 92 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=10V — 4.8 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C — 75 W
Gambaran Suhu Operasi — -55C to +175C (junction)
Package Type — TO-220AB through-hole
Technology Family — StrongIRFET / HEXFET
Channel Type — N-Channel
Logic-Level Gate Drive — Yes (optimized for 5V VGS)

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