IRFZ48NPBF vs IRLB8748PBF तुलना
विस्तृत दोनों ओर की तुलना IRFZ48NPBF द्वारा Infineon और IRLB8748PBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFZ48NPBF | IRLB8748PBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 15 nC typical |
| Power Dissipation (PD) at TC | 130 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | — |
| पैकेज | TO-220AB (through-hole) | — |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | — |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS स्थिति | Compliant | Compliant (Pb-free PBF suffix) |
| Qualification Standard | Industrial market | JEDEC (Industrial market per datasheet) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 92 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| ऑपरेटिंग तापमान रेंज | — | -55C to +175C (junction) |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Channel Type | — | N-Channel |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |