IRL540NSTRLPBF vs IRF540NSTRLPBF Comparison
Detailed side-by-side comparison of IRL540NSTRLPBF by Infineon and IRF540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL540NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Total Gate Charge (Qg) | 49.3 nC | — |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Operating Temperature Range | -55°C to +175°C | -55 C to +175 C |
| Package | TO-263 (D2PAK) | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | Yes (HEXFET ruggedized) |
| RoHS Status | Compliant (LPBF suffix indicates lead-free) | Compliant (Pb-free) |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| Transistor Type | — | N-Channel MOSFET |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Packaging | — | Tape & Reel (13-inch reel) |