IRL540NSTRLPBF vs IRF540NSTRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRL540NSTRLPBF tarafından Infineon ve IRF540NSTRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRL540NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Total Gate Charge (Qg) | 49.3 nC | — |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| İşletim Sıcaklığı Aralığı | -55°C to +175°C | -55 C to +175 C |
| Paket | TO-263 (D2PAK) | D2PAK (TO-263), surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | Yes (HEXFET ruggedized) |
| RoHS Durumu | Compliant (LPBF suffix indicates lead-free) | Compliant (Pb-free) |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | — |
| Transistor Türü | — | N-Channel MOSFET |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Packaging | — | Tape & Reel (13-inch reel) |