IRL540NSTRLPBF vs IRF540NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL540NSTRLPBF disebabkan oleh Infineon dan IRF540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRL540NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Total Gate Charge (Qg) | 49.3 nC | — |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55 C to +175 C |
| Kemasan | TO-263 (D2PAK) | D2PAK (TO-263), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | Yes (HEXFET ruggedized) |
| Status RoHS | Compliant (LPBF suffix indicates lead-free) | Compliant (Pb-free) |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Packaging | — | Tape & Reel (13-inch reel) |