IRLR3114ZTRPBF vs IRLR3636TRLPBF Comparison
Detailed side-by-side comparison of IRLR3114ZTRPBF by Infineon and IRLR3636TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3114ZTRPBF | IRLR3636TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | IR HEXFET® (IR MOSFET™) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | — |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | — |
| Pulsed Drain Current (IDM) | 130 A | [DATA_NEEDED: IDM rating] |
| Gate-Source Voltage (VGS) max | 16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | 1.0 V to 2.5 V (logic-level) |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | — |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | — |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | — |
| Input Capacitance (Ciss) | 3.81 nF | — |
| Power Dissipation (Pd, Tc=25 C) | 140 W | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 (2 + tab) | — |
| RoHS Status | Compliant | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25°C) | — | 50 A |
| Continuous Drain Current (ID, TC=100°C) | — | 32 A [DATA_NEEDED: exact TC=100°C ID rating] |
| RDS(on) Max @ VGS=10V | — | 6.8 mΩ |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (QG) | — | 33 nC |
| Power Dissipation (PD, TC=25°C) | — | 143 W |
| Operating Temperature Range | — | -55 °C to +175 °C (TJ) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Avalanche Rated | — | Yes (per Infineon datasheet family) |