IRLR3114ZTRPBF vs IRLR3636TRLPBF 比較
詳細並排比較 IRLR3114ZTRPBF 由 Infineon 與 IRLR3636TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR3114ZTRPBF | IRLR3636TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | IR HEXFET® (IR MOSFET™) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | — |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | — |
| Pulsed Drain Current (IDM) | 130 A | [DATA_NEEDED: IDM rating] |
| Gate-Source Voltage (VGS) max | 16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | 1.0 V to 2.5 V (logic-level) |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | — |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | — |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | — |
| Input Capacitance (Ciss) | 3.81 nF | — |
| Power Dissipation (Pd, Tc=25 C) | 140 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + tab) | — |
| RoHS 狀態 | Compliant | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25°C) | — | 50 A |
| Continuous Drain Current (ID, TC=100°C) | — | 32 A [DATA_NEEDED: exact TC=100°C ID rating] |
| RDS(on) Max @ VGS=10V | — | 6.8 mΩ |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (QG) | — | 33 nC |
| Power Dissipation (PD, TC=25°C) | — | 143 W |
| 工作溫度範圍 | — | -55 °C to +175 °C (TJ) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Avalanche Rated | — | Yes (per Infineon datasheet family) |