IRLR3410TRLPBF vs IRFR3710ZTRPBF Comparison

Detailed side-by-side comparison of IRLR3410TRLPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3410TRLPBF IRFR3710ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A 56 A
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC —
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W 140 W
Operating Junction Temperature -55C to +175C -55C to +175C
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
MSL Level 1 —
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote