IRLR3410TRLPBF vs IRFR3710ZTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRLPBF disebabkan oleh Infineon dan IRFR3710ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR3410TRLPBF IRFR3710ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A 56 A
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC —
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W 140 W
Suhu Hubungan Operasi -55C to +175C -55C to +175C
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
Aras MSL 1 —
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Status RoHS — Compliant
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga