IRLR3410TRLPBF vs IRFR3710ZTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3410TRLPBF sa pamamagitan ng Infineon at IRFR3710ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR3410TRLPBF | IRFR3710ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | 56 A |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | 140 W |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +175C |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| Level ng MSL | 1 | — |
| Avalanche Rated | Yes (UIS tested) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |