ISA250300C04LMDSXTMA1 vs IRFB3207ZPBF 比較

詳細並排比較 ISA250300C04LMDSXTMA1 由 Infineon 與 IRFB3207ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ 啟用中

規格比較

參數 ISA250300C04LMDSXTMA1 IRFB3207ZPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (N+P array) —
Drain-Source Voltage (VDS) 40 V 75 V
Continuous Drain Current N-channel 5.9 A (Ta), 7.9 A (Tc) —
Continuous Drain Current P-channel 5.8 A (Ta), 7.8 A (Tc) —
Power Dissipation 1.4 W (Ta), 2.5 W (Tc) —
封裝 SO-8 (PG-DSO-8-920) TO-220AB (3-lead through-hole)
安裝類型 Surface Mount Through Hole
Technology Trench MOSFET (OptiMOS 3) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Packaging Tape & Reel (suffix XTMA1) —
Datasheet Document Infineon ISA250300C04LMDS datasheet (per Infineon product page) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range per channel] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) per channel at specified VGS] —
RoHS 狀態 Compliant —
Lead-Free Yes —
Part Number — IRFB3207ZPBF
Series — HEXFET
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
工作接面溫度 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL 等級 — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

資料表與資源

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