ISA250300C04LMDSXTMA1 vs IRFB3207ZPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISA250300C04LMDSXTMA1 disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
ISA250300C04LMDSXTMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | ISA250300C04LMDSXTMA1 | IRFB3207ZPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (N+P array) | — |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current N-channel | 5.9 A (Ta), 7.9 A (Tc) | — |
| Continuous Drain Current P-channel | 5.8 A (Ta), 7.8 A (Tc) | — |
| Power Dissipation | 1.4 W (Ta), 2.5 W (Tc) | — |
| Kemasan | SO-8 (PG-DSO-8-920) | TO-220AB (3-lead through-hole) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Technology | Trench MOSFET (OptiMOS 3) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Packaging | Tape & Reel (suffix XTMA1) | — |
| Datasheet Document | Infineon ISA250300C04LMDS datasheet (per Infineon product page) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range per channel] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) per channel at specified VGS] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Aras MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |