ISC015N06NM5LF2ATMA1 vs IPT015N10NF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N06NM5LF2ATMA1 sa pamamagitan ng Infineon at IPT015N10NF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ NakahandaInfineon
IPT015N10NF2SATMA1 - 100V 315A 1.5mΩ OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC015N06NM5LF2ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 217 W | — |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | — |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8 FL (5x6 mm) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| Energia ng Isang Pagpupuslit ng Pagbubwis | — | [DATA_NEEDED: EAS value] |
| Tindminan RoHS | — | Compliant |