ISC015N06NM5LF2ATMA1 vs IPT015N10NF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N06NM5LF2ATMA1 dari Infineon dan IPT015N10NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC015N06NM5LF2ATMA1 IPT015N10NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS trench, N-channel enhancement
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8 FL (5x6 mm) PG-HSOF-8-10 (9-pin, 8+tab)
Tipe Mounting Surface Mount Surface Mount
RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 315 A
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Rentang Suhu Kerja — -55 °C to +175 °C
Gate Drive Voltage (typ) — 10 V
Energi Pulsa Tandai — [DATA_NEEDED: EAS value]
Status RoHS — Compliant

Spek dan Sumber

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