ISC016N08NM8SCATMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of ISC016N08NM8SCATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC016N08NM8SCATMA1

ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon

ISC016N08NM8SCATMA1 βœ“ Active
Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active

Specification Comparison

Parameter ISC016N08NM8SCATMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 8 OptiMOS 5
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current at TA=25Β°C (ID) 29 A β€”
Continuous Drain Current at TC=25Β°C (ID) 269 A β€”
Power Dissipation at TC=25Β°C (PD) 263 W β€”
Package PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 8 (shield-gate trench) OptiMOS 5 Trench MOSFET
Operating Temperature Range -55C to +175C -55C to +175C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg @ VGS=10V] β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1
Drain Tab Connection Top + bottom exposed (dual-side cooling) β€”
Configuration β€” Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) β€” 100 V
Continuous Drain Current (Id) at Tj β€” 23 A
Power Dissipation (Pd) at Tc β€” 38 W
Automotive Qualified β€” Yes (AEC-Q101, IAU prefix)
Pin Count β€” 8
Packing β€” Tape & Reel (T&R)

Datasheets & Resources

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