ISC016N08NM8SCATMA1 vs IAUCN10S5L280DATMA1 Perbandingan
Perbandingan bersamaan detil ISC016N08NM8SCATMA1 dari Infineon dan IAUCN10S5L280DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ AktifInfineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC016N08NM8SCATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 8 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| Paket | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TDSON-8-61 (SSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | OptiMOS 5 Trench MOSFET |
| Rentang Suhu Kerja | -55C to +175C | -55C to +175C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Jumlah Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |