ISC028N03LF2SATMA1 vs ISC009N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC028N03LF2SATMA1 by Infineon and ISC009N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC028N03LF2SATMA1 ISC009N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Operating Junction Temperature -55 C to +175 C —
Package PG-TDSON-8-62 (5x6 mm) with exposed pad PG-TDSON-8-62 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Transistor Type — N-Channel MOSFET
Technology — OptiMOS™ trench
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 43 A
Continuous Drain Current (ID) at Tc — 341 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
On-Resistance RDS(on) max — 0.9 mΩ
Gate Threshold Voltage (VGS(th)) — 2.35 V (typ)
Operating Temperature Range — -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet])
Gate Drive Voltage (VGS) — 10 V (typical for rated RDS(on))
RoHS Status — Compliant

Datasheets & Resources

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