ISC028N03LF2SATMA1 vs ISC009N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC028N03LF2SATMA1 disebabkan oleh Infineon dan ISC009N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC028N03LF2SATMA1 | ISC009N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-62 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 43 A |
| Continuous Drain Current (ID) at Tc | — | 341 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) |
| Gate Drive Voltage (VGS) | — | 10 V (typical for rated RDS(on)) |
| Status RoHS | — | Compliant |