ISC028N03LF2SATMA1 vs ISC009N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISC028N03LF2SATMA1 dari Infineon dan ISC009N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC028N03LF2SATMA1 | ISC009N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-62 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Tipe Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 43 A |
| Continuous Drain Current (ID) at Tc | — | 341 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| Rentang Suhu Kerja | — | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) |
| Gate Drive Voltage (VGS) | — | 10 V (typical for rated RDS(on)) |
| Status RoHS | — | Compliant |