ISC037N12NM6ATMA1 vs IAUS300N08S5N011TATMA1 Comparison

Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IAUS300N08S5N011TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC037N12NM6ATMA1 IAUS300N08S5N011TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 6 (N-channel trench MOSFET) OptiMOS-5 (trench MOSFET)
Drain-Source Voltage (Vds) 120 V —
Continuous Drain Current (Id) at Ta=25C 19.2 A —
Pulsed Drain Current (Idm) at Tc 163 A —
On-Resistance Rds(on) typ at Vgs=10V 3.7 mOhm —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 214 W —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) typ [DATA_NEEDED: Qg total] —
Package PG-TDSON-8 FL (SuperSO8) PG-HDSOP-16-2 (HDSOP-16)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55 C to +175 C (Tj)
RoHS Status Compliant Compliant
Avalanche Energy Rated Yes (single-pulse) —
MSL Level 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 80 V
Continuous Drain Current (I_D, Tj) — 300 A
Power Dissipation (P_D, Tc) — 375 W
R_DS(on) Max @ V_GS=10V — 1.1 mOhm
Gate Threshold Voltage (V_GS(th)) — 3 V (max)
Total Gate Charge (Q_G) @ 10V — 231 nC
Output Capacitance (C_OSS) — 130 pF (typ)
Reverse Transfer Capacitance (C_RSS) — 16.25 nF (typ)
Number of Channels — 1
Automotive Qualified — Yes (Infineon automotive part)

Datasheets & Resources

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