ISC037N12NM6ATMA1 vs IAUS300N08S5N011TATMA1 Perbandingan
Perbandingan bersamaan detil ISC037N12NM6ATMA1 dari Infineon dan IAUS300N08S5N011TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC037N12NM6ATMA1 | IAUS300N08S5N011TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS-5 (trench MOSFET) |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Paket | PG-TDSON-8 FL (SuperSO8) | PG-HDSOP-16-2 (HDSOP-16) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55 C to +175 C (Tj) |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 300 A |
| Power Dissipation (P_D, Tc) | — | 375 W |
| R_DS(on) Max @ V_GS=10V | — | 1.1 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 3 V (max) |
| Total Gate Charge (Q_G) @ 10V | — | 231 nC |
| Output Capacitance (C_OSS) | — | 130 pF (typ) |
| Reverse Transfer Capacitance (C_RSS) | — | 16.25 nF (typ) |
| Number of Channels | — | 1 |
| Automotive Qualified | — | Yes (Infineon automotive part) |