ISC037N12NM6ATMA1 vs IAUS300N08S5N011TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC037N12NM6ATMA1 disebabkan oleh Infineon dan IAUS300N08S5N011TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC037N12NM6ATMA1 | IAUS300N08S5N011TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS-5 (trench MOSFET) |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Kemasan | PG-TDSON-8 FL (SuperSO8) | PG-HDSOP-16-2 (HDSOP-16) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55 C to +175 C (Tj) |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 300 A |
| Power Dissipation (P_D, Tc) | — | 375 W |
| R_DS(on) Max @ V_GS=10V | — | 1.1 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 3 V (max) |
| Total Gate Charge (Q_G) @ 10V | — | 231 nC |
| Output Capacitance (C_OSS) | — | 130 pF (typ) |
| Reverse Transfer Capacitance (C_RSS) | — | 16.25 nF (typ) |
| Number of Channels | — | 1 |
| Automotive Qualified | — | Yes (Infineon automotive part) |