ISC046N13NM6ATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC046N13NM6ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | — |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Package / Case | PG-TDSON-8 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55°C to +175°C (TJ max, per datasheet) |
| Technology | OptiMOS 6 trench MOSFET | — |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Package | — | PG-TDSON-8 FL (TDSON EP) |
| MSL Level | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |