ISC046N13NM6ATMA1 vs ISC080N10NM6ATMA1 比較
詳細並排比較 ISC046N13NM6ATMA1 由 Infineon 與 ISC080N10NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC046N13NM6ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | — |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| 封裝 / 外殼 | PG-TDSON-8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | -55°C to +175°C (TJ max, per datasheet) |
| Technology | OptiMOS 6 trench MOSFET | — |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| 封裝 | — | PG-TDSON-8 FL (TDSON EP) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |