ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISC060N10NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.21 | $22.10 |
| 100 | $1.89 | $189.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.43 | $1,430.00 |
Drop-in alternatives for ISC060N10NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →ISC060N10NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 100 V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta | 15 A |
| Continuous Drain Current (ID) at Tc | 97 A |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 125 W |
| Operating Temperature Range | -55 °C to +175 °C (TJ) |
| Package | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) |
| Polarity | N-Channel |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
ISC060N10NM6ATMA1 Pin Configuration
| Pin 1 | Source (S1) — Source connection (internally bonded to S2-S8 and exposed pad) |
| Pin 2 | Source (S2) — Source connection |
| Pin 3 | Source (S3) — Source connection |
| Pin 4 | Gate (G) — Gate drive input, 10 V enhancement recommended |
| Pin 5 | Source (S5) — Source connection |
| Pin 6 | Source (S6) — Source connection |
| Pin 7 | Source (S7) — Source connection |
| Pin 8 | Source (S8) — Source connection |
| Pin Tab | Drain (D) — Drain connection (also bonded to exposed thermal pad on PCB) |
ISC060N10NM6ATMA1 Safe Operating Area (DC)
Typical Applications
ISC060N10NM6ATMA1 is suitable for 6 applications: 48 V Telecom Intermediate Bus Converter, Server and Datacom Point-of-Load Regulators, Solar Micro-Inverters and String Inverters, Synchronous Rectifiers in Isolated DC-DC Converters, Industrial SMPS and Motor Drives, Hot-Swap and OR-ing Controllers.
48 V Telecom Intermediate Bus Converter
The ISC060N10NM6ATMA1 is well-matched to 48 V telecom intermediate bus converters (IBC) operating between 36 V and 60 V input. Its 100 V VDS rating gives 40 V transient headroom above the standard 60 V telecom maximum, while its 6 mΩ RDS(on) at 10 V VGS keeps synchronous-rectifier conduction loss below 0.5 percent at 40 A output. The low Qg and Qoss of OptiMOS 6 enable switching frequencies above 300 kHz, shrinking the IBC transformer footprint. Compared to OptiMOS 5 parts, the FOM improvement is approximately 30 percent, easing thermal budgets in sealed brick modules.
Recommended
Server and Datacom Point-of-Load Regulators
For server and datacom point-of-load (POL) regulators fed from a 48 V bus, the ISC060N10NM6ATMA1 offers the ruggedness required by hot-swap and OR-ing topologies. Its 97 A continuous Tc-rated current handles 1.5 kW brick converters without paralleling, and the 125 W power dissipation at Tc supports full-load operation with a 1 square-inch top-side copper pour. The PG-TDSON-8 FL footprint matches standard POL land patterns, allowing direct substitution of older OptiMOS 5 designs while gaining 20 percent lower switching loss at 200 kHz.
Recommended
Solar Micro-Inverters and String Inverters
The ISC060N10NM6ATMA1 suits solar micro-inverter and string-inverter power stages where maximum power point (MPP) voltage stays within 80 V. Its 100 V breakdown gives 25 percent safety margin against transient over-voltage events on DC bus capacitance, and the 6 mΩ RDS(on) keeps full-load efficiency above 98 percent at 25 A output. The OptiMOS 6 body-diode softness reduces reverse-recovery loss in H4 and HERIC topologies, lowering EMI filter cost. Industrial -55 °C to +175 °C junction rating supports outdoor enclosure profiles from -40 °C to +85 °C ambient.
Recommended
Synchronous Rectifiers in Isolated DC-DC Converters
The ISC060N10NM6ATMA1 is a strong synchronous rectifier (SR) candidate for 48 V to 12 V isolated DC-DC converters in the 300 W to 1 kW class. Its 6 mΩ RDS(on) outperforms most planar Schottky diodes at currents above 10 A, eliminating reverse-recovery loss and improving efficiency by 1.5 percent at full load. The 97 A continuous Tc rating handles transformer secondary currents with adequate margin, and the 100 V rating is sufficient for 36 V to 60 V primary-side-derived secondaries. The PG-TDSON-8 FL exposed pad reduces PCB thermal resistance to under 10 °C/W with a 50 mm² copper pour.
Recommended
Industrial SMPS and Motor Drives
For industrial switch-mode power supplies (SMPS) and 48 V motor-drive half-bridges, the ISC060N10NM6ATMA1 delivers 100 V ruggedness and a 97 A continuous rating that supports 5 kW peak motor power. Its low Qgd reduces shoot-through risk by allowing dead-time as low as 30 ns, while the optimized body diode survives hard commutation events in motor regenerative braking. The 175 °C junction rating enables under-hood automotive and industrial deployments where ambient temperatures reach 125 °C. The PG-TDSON-8 FL footprint is compatible with standard Infineon 100 V evaluation PCBs.
Recommended
Hot-Swap and OR-ing Controllers
Hot-swap and OR-ing controllers in 48 V server backplanes can leverage the ISC060N10NM6ATMA1 as the main pass MOSFET. Its 100 V VDS handles transient events up to 80 V on standard 48 V rails, while its 6 mΩ RDS(on) keeps forward voltage drop below 200 mV at 30 A load. The PG-TDSON-8 FL exposed pad supports sustained 3 W dissipation on FR4 with a 1 square-inch copper pour, sufficient for 99 percent of hot-swap events. Pairing with a hot-swap controller such as the LM25069 reduces inrush current and protects downstream converters from transient faults.
Recommended
Recommended Products Summary
Engineering reference data for ISC060N10NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC080N10NM6ATMA1 | BSZ096N10LS5ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 80 V |
| Continuous Drain Current (ID @ Tc) | 97 A | 97 A | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) max @ VGS = 10 V | 6 mΩ | 8 mΩ | 9.6 mΩ | 12.3 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 3 |
| Power Dissipation (PD @ Tc) | 125 W | 125 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
| RoHS Compliance | Yes | Yes | Yes | Yes |
Key Differentiators
- Latest-generation OptiMOS 6 platform (vs BSZ096N10LS5ATMA1)
- Lowest RDS(on) in OptiMOS 6 100 V family (vs ISC080N10NM6ATMA1)
- 100 V voltage headroom for 48 V telecom and industrial rails (vs BSC123N08NS3GATMA1)
Design Notes
The ISC060N10NM6ATMA1 dissipates 125 W at Tc, requiring the exposed pad to be soldered to a copper pour of at least 25 mm² per side on a 1 oz 4-layer PCB. Estimated: with a 50 mm² top-side copper pour and 25 mm² inner copper, junction-to-ambient thermal resistance is approximately 45 °C/W. At 3 W dissipation the junction rise is 135 °C above ambient, requiring either active cooling or larger copper area in sustained full-load conditions.
Place a 10 kΩ gate-source pull-down resistor within 5 mm of the gate pin to prevent unintended turn-on from Miller coupling during high dv/dt switching events. Keep the high-side and low-side MOSFET gate traces short and symmetric to avoid shoot-through. Use a 4-layer PCB with a dedicated ground plane directly under the MOSFET drain tab to minimize parasitic inductance and improve thermal spreading.
Drive the ISC060N10NM6ATMA1 with a gate voltage of 10 V for full RDS(on) specification. At 6 V VGS, RDS(on) increases by 50 percent, eroding the efficiency advantage. Use a dedicated gate driver such as the 1EDN8511BXUSA1 with 4 A peak source/sink current for switching frequencies above 200 kHz. Add a 10 Ω gate resistor to dampen ringing without sacrificing switching speed.
Do not exceed the absolute maximum VDS of 100 V, including avalanche events from unclamped inductive switching. For motor-drive and relay applications, add a TVS or RC snubber rated for the worst-case demagnetization voltage. The body diode has limited reverse-recovery - in continuous-conduction mode designs, verify that the dead-time and switching frequency stay within the SOA defined in the Infineon OptiMOS 6 datasheet.
Compliance Information
RoHS compliant per LCSC and DigiKey product listings. Not AEC-Q100 qualified - this is an industrial-grade MOSFET. Halogen-free status not explicitly stated in provided data.
