ISC060N10NM6ATMA1 vs ISC046N13NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC060N10NM6ATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC046N13NM6ATMA1 ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC060N10NM6ATMA1 ISC046N13NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.43 $1.08
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 100 V β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 135 V
Continuous Drain Current (ID) at Ta 15 A β€”
Continuous Drain Current (ID) at Tc 97 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Drain-Source On-Resistance (RDS(on)) 6 mΞ© at VGS = 10 V, ID = 25 A β€”
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 125 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55 C to +175 C
Package PG-TDSON-8 FL (5.15 x 6.15 mm) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) OptiMOS 6 trench MOSFET
Polarity N-Channel β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Part Family β€” OptiMOS 6
Continuous Drain Current (ID) at TA β€” 17 A
Continuous Drain Current (ID) at TC β€” 142 A
Power Dissipation (PD) at TA β€” 3 W
Power Dissipation (PD) at TC β€” 211 W
Package / Case β€” PG-TDSON-8
Gate Drive (recommended) β€” 10 V (typical)
Packaging β€” Tape & Reel

Datasheets & Resources

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