ISC060N10NM6ATMA1 vs ISC046N13NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N10NM6ATMA1 disebabkan oleh Infineon dan ISC046N13NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC060N10NM6ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 135 V |
| Continuous Drain Current (ID) at Ta | 15 A | — |
| Continuous Drain Current (ID) at Tc | 97 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (TJ) | -55 C to +175 C |
| Kemasan | PG-TDSON-8 FL (5.15 x 6.15 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 6 trench MOSFET |
| Polarity | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Part Family | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Kemasan / Case | — | PG-TDSON-8 |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |