ISC0802NLSATMA1 vs ISC080N10NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC0802NLSATMA1

ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon

ISC0802NLSATMA1 βœ“ Active
Infineon
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon

ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon

ISC080N10NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC0802NLSATMA1 ISC080N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.80 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Part Number ISC0802NLSATMA1 β€”
FET Type N-Channel β€”
Technology OptiMOS 5 (Power MOSFET) β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 150 A 75 A
Continuous Drain Current (ID) at Ta 22 A 13 A
RDS(on) max at VGS=10V 3.6 mOhm β€”
Power Dissipation (Pd) at Ta 2.5 W β€”
Power Dissipation (Pd) at Tc 125 W β€”
Operating Temperature Range -55 C to +175 C -55Β°C to +175Β°C (TJ max, per datasheet)
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8 FL (TDSON EP)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Family β€” OptiMOSβ„’ 6 100V
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) Max β€” 100 V
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A β€” 8.05 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 3.3 V at 36 Β΅A
MSL Level β€” 1 (per JEDEC J-STD-020, per datasheet)
Lead-Free β€” Yes
Halogen-Free β€” Yes
Qualification β€” Industrial grade (per Infineon OptiMOS 6 100V family)

Datasheets & Resources

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