ISC0802NLSATMA1 vs ISC080N10NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC0802NLSATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC0802NLSATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 150 A | 75 A |
| Continuous Drain Current (ID) at Ta | 22 A | 13 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55°C to +175°C (TJ max, per datasheet) |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Level MSL | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |