ISC0802NLSATMA1 vs ISC080N10NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC0802NLSATMA1 von Infineon und ISC080N10NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC0802NLSATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,80 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 150 A | 75 A |
| Continuous Drain Current (ID) at Ta | 22 A | 13 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55°C to +175°C (TJ max, per datasheet) |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| MSL-Level | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |