ISC0802NLSATMA1 vs ISC080N10NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC0802NLSATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC0802NLSATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 150 A | 75 A |
| Continuous Drain Current (ID) at Ta | 22 A | 13 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C | -55°C to +175°C (TJ max, per datasheet) |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Aras MSL | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |