ISC110N12NM6ATMA1 vs ISC060N10NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC110N12NM6ATMA1 by Infineon and ISC060N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC110N12NM6ATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $1.43 |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Ta | 11 A | 15 A |
| Continuous Drain Current (ID) at Tc | 62 A | 97 A |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | β |
| Total Gate Charge (Qg) | 15.4 nC | β |
| Input Capacitance (Ciss) | 1.1 nF | β |
| Output Capacitance (Coss) | 330 pF | β |
| Reverse Transfer Capacitance (Crss) | 10 pF | β |
| Power Dissipation (Pd) at Tc | 94 W | β |
| Power Dissipation (Pd) at Ta | 3 W | β |
| Avalanche Energy (EAS) | 185 mJ | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | SuperSO8 (TDSON-8) | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 6 100 V |
| Transistor Type | β | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | β | 6 mΞ© at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3.3 V (typical) |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| Technology | β | OptiMOS 6 (thin-wafer trench) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |