ISC110N12NM6ATMA1 vs ISC060N10NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC110N12NM6ATMA1 sa pamamagitan ng Infineon at ISC060N10NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC110N12NM6ATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Ta | 11 A | 15 A |
| Continuous Drain Current (ID) at Tc | 62 A | 97 A |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | SuperSO8 (TDSON-8) | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 100 V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | — | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.3 V (typical) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (TJ) |
| Technology | — | OptiMOS 6 (thin-wafer trench) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |