ISC110N12NM6ATMA1 vs ISC060N10NM6ATMA1 比較
詳細並排比較 ISC110N12NM6ATMA1 由 Infineon 與 ISC060N10NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC110N12NM6ATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Ta | 11 A | 15 A |
| Continuous Drain Current (ID) at Tc | 62 A | 97 A |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | SuperSO8 (TDSON-8) | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 100 V |
| 電晶體類型 | — | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | — | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.3 V (typical) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| 工作溫度範圍 | — | -55 °C to +175 °C (TJ) |
| Technology | — | OptiMOS 6 (thin-wafer trench) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |