ISCH99N04NM7VATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison

Detailed side-by-side comparison of ISCH99N04NM7VATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISCH99N04NM7VATMA1

ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon

ISCH99N04NM7VATMA1 βœ“ Active
Infineon
IQEH50NE2LM7ZCGATMA1

IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon

IQEH50NE2LM7ZCGATMA1 βœ“ Active

Specification Comparison

Parameter ISCH99N04NM7VATMA1 IQEH50NE2LM7ZCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.42
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 β€”
FET Type N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current at Ta (I_D) 40 A β€”
Pulsed Drain Current at Tc (I_DM) 284 A β€”
Power Dissipation at Ta (P_D) 3 W β€”
Power Dissipation at Tc (P_D) 150 W β€”
Gate Threshold Voltage (V_th) Up to 3.2 V β€”
Package PG-TDSON-8 (TDSON-8 FL) PG-TTFN-9-3
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Technology OptiMOS 7 Trench Power MOSFET OptiMOS 7 (Trench-Gate)
Operating Mode Enhancement-mode β€”
Target Application 12 V to 48 V Motor Drives β€”
Product Family β€” OptiMOS 7 Power-Transistor
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (Vds) Max β€” 25 V
Continuous Drain Current (Ta) β€” 54 A
Continuous Drain Current (Tc) β€” 422 A
Maximum On-Resistance (Rds(on)) β€” 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) β€” 1.7 V
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 150 W
Maximum Junction Temperature β€” +175 degrees C
Operating Temperature Range β€” -55 degrees C to +175 degrees C
Qualification β€” Industrial grade per Infineon datasheet

Datasheets & Resources

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