ISZ019N03L5SATMA1 vs IPT017N12NM6ATMA1 Comparison

Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and IPT017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ019N03L5SATMA1 IPT017N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.85
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (<= 40V) β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 120 V
Continuous Drain Current (ID) at TA=25C 22 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
RDS(on) at VGS=10V 1.9 mΞ© (typical, ID=20A) β€”
Gate Threshold Voltage (VGS(th)) 2 V (typical) β€”
Gate-Source Voltage Rating (VGS) Β±20 V β€”
Total Gate Charge (Qg) 44 nC at VGS=10V β€”
Input Capacitance (Ciss) 2800 pF at VDS=15V β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-HSOF-8 (TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (TJ max) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS / REACH Compliant β€”
Avalanche Rated Yes β€”
RG-tested 100% β€”
Part Number β€” IPT017N12NM6ATMA1
Technology β€” OptiMOS 6
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 29 A
Continuous Drain Current (ID) at Tc β€” 331 A
On-Resistance RDS(on) max β€” 1.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 395 W
Operating Temperature β€” -55C to +175C
Pin Count β€” 8 + tab
Packaging β€” Tape & Reel
RoHS Status β€” Compliant

Datasheets & Resources

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