ISZ019N03L5SATMA1 vs ISZ028N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ019N03L5SATMA1 sa pamamagitan ng Infineon at ISZ028N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ NakahandaInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ019N03L5SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (<= 40V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 22 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2.35 V |
| Gate-Source Voltage Rating (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | — |
| Packhaging | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (TJ max) | -55C to +175C (junction, typical) |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 |
| RoHS / REACH | Compliant | — |
| Avalanche Rated | Yes | — |
| RG-tested | 100% | — |
| FET Type | — | N-Channel |
| Technology | — | StrongIRFET 2 (Trench MOSFET) |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Tindminan RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |