ISZ072N06NM6ATMA1 vs IQE018N06NM6SCATMA1 Perbandingan
Perbandingan bersamaan detil ISZ072N06NM6ATMA1 dari Infineon dan IQE018N06NM6SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ072N06NM6ATMA1 | IQE018N06NM6SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Dissipasi Listrik (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Paket | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-WHSON-8-1 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C (TJ) |
| Technology | OptiMOS 6 trench MOSFET | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Part Family | — | OptiMOS 6 60 V |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC | — | 178 A |
| On-Resistance RDS(on) Max | — | 1.8 mΩ at VGS=10 V |
| Gate Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 125 W |
| Lead-Free | — | Yes |