ISZ15EP15LMATMA1 vs ISZ028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ15EP15LMATMA1 dari Infineon dan ISZ028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ15EP15LMATMA1 ISZ028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS —
Polarity P-Channel —
Drain-Source Voltage (VDS) max -150 V —
Drain-Source On-Resistance (RDS(on)) max 1500 mOhm @ VGS = -10 V —
Continuous Drain Current (ID) at TA=25C 820 mA —
Continuous Drain Current (ID) at TC=25C 2.7 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Power Dissipation (PD) at TC=25C 26.3 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 2.35 V
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Technology OptiMOS trench-gate StrongIRFET 2 (Trench MOSFET)
Paket PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad PG-TSDSON-8 FL (FL = flat lead)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55C to +175C (junction, typical)
Status RoHS Compliant Compliant
Level MSL 1 1
Packaging Tape and Reel (T&R) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 128 A
Continuous Drain Current (ID) at Ta — 22 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max — 2.8 mΩ
Power Dissipation (Tc) — 83 W
Power Dissipation (Ta) — 3 W
Gate Drive Voltage (recommended) — 10 V (logic level at 4.5 V)
Avalanche Energy Rated — Yes (single-pulse)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

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